It prepares specialists in theoretical and applied physics, applied mathematics, and related disciplines. It is sometimes referred to as “the Russian MIT.”
MIPT is famous in the countries of the former Soviet Union, but is less known abroad. This is largely due to the specifics of the MIPT educational process (see “Phystech System” below). University rankings such as The Times Higher Education Supplement are based primarily on publications and citations. With its emphasis on embedding research in the educational process, MIPT “outsources” education and research beyond the first two or three years of study to institutions of the Russian Academy of Sciences. MIPT’s own faculty is relatively small, and many of its distinguished lecturers are visiting professors from those institutions. Student research is typically performed outside of MIPT, and research papers do not identify the authors as MIPT students. This effectively hides MIPT from the academic radar, an effect not unwelcome during the Cold War era when leading scientists and engineers of the Soviet arms and space programs studied there.
The word “phystech,” without the capital P, is also used in Russian to refer to Phystech students and graduates.
The main MIPT campus is located in Dolgoprudny, a northern suburb of Moscow. However the Aeromechanics Department is based in Zhukovsky, a suburb south-east of Moscow.
Moscow Institute of Physics and Technology (MIPT) research articles from Innovation Toronto
- Personalized medicine will employ computer algorithms – June 16, 2016
- New 3D hydrogel biochips prove to be superior in detecting bowel cancer at early stages – May 29, 2016
- New type of graphene-based transistor will increase the clock speed of processors by orders of magnitude – May 21, 2016
- Physicists build “electronic synapses” for neural networks – April 22, 2016
- Scientists develop a 100 times faster type of memory cell – March 21, 2016
- Physicists get a perfect material for air filters with many possible uses – March 2, 2016
- Physicists promise a copper revolution in nanophotonics – February 27, 2016
- Scientists build a neural network using plastic memristors – January 28, 2016
- Faster computers via new metamaterial – January 3, 2016
- Scientists Find Way to Maintain Quantum Entanglement in Amplified Signals – July 30, 2014
- Nature Inspires New Submarine Design
Scientists have developed a new type of graphene-based transistor and using modeling they have demonstrated that it has ultralow power consumption compared with other similar transistor devices
Scientists have developed a new type of graphene-based transistor and using modelling they have demonstrated that it has ultralow power consumption compared with other similar transistor devices. The findings have been published in a paper in the journal Scientific Reports. The most important effect of reducing power consumption is that it enables the clock speed of processors to be increased. According to calculations, the increase could be as high as two orders of magnitude.
“The point is not so much about saving electricity – we have plenty of electrical energy. At a lower power, electronic components heat up less, and that means that they are able to operate at a higher clock speed – not one gigahertz, but ten for example, or even one hundred,” says the corresponding author of the study, the head of MIPT’s Laboratory of Optoelectronics and Two-Dimensional Materials, Dmitry Svintsov.
Scientists from MIPT have succeeded in growing ultra-thin (2.5-nanometre) ferroelectric films based on hafnium oxide that could potentially be used to develop non-volatile memory elements called ferroelectric tunnel junctions. The results of the study have been published in the journal ACS Appl. Mater. Interfaces.
Humans are constantly expanding the volume of stored and processed information, which according to statistics is doubling every 1.5 years. To store this information, we need increasing amounts of computer memory, especially non-volatile memory, which stores information even in the event of a power outage. Scientists all over the world are trying to develop faster and more compact storage devices. The ideal would be a “universal” memory device with the speed of RAM, the capacity of a hard drive, and the non-volatility of a flash drive.
There are many known principles that can be used to build memory, but each one has its drawbacks. This is why modern computers and mobile devices have multiple types of memory.
Non-volatile memory based on ferroelectric tunnel junctions is a promising development that has not yet been fully implemented. A ferroelectric is a material that is able to “remember” the direction of an externally applied electric field by the residual polarization charge.
Thin-film ferroelectrics have for a long time been used to make non-volatile memory devices, however it is extremely difficult to miniaturize them in order to achieve high density / storage capacity and, in addition to this, they are made of materials that are “incompatible” with the production processes used in modern microelectronics.