The research group of Professor Hideo Ohno and Associate Professor Shunsuke Fukami of Tohoku University has demonstrated the sub-nanosecond operation of a nonvolatile magnetic memory device.
Recently, the concept of “Internet of Things” (IoT) – a giant network of connected devices, people and things – has been attracting a great deal of attention. Although its range of application is limited at this stage, it is expected that in the near future, IoT will be widely applied and will play important roles in fields such as security, automated driving, social infrastructure and disability aid.
An integrated circuit, or microcontroller unit, is the brain in the IoT society, where information is acquired, processed, and transmitted. Thus, development of device technologies to make integrated circuits ultralow-power and high-performance, or high-speed, is of great importance for the progress of the IoT society.
In terms of low-power, the use of nonvolatile memories is known to be effective.
On the other hand, in terms of high-performance, it has been difficult for the nonvolatile memories which are both currently available (commercialized) and under development (not commercialized yet) to achieve the speed comparable to the one realized with currently-used volatile static random access memories.
The research group at Tohoku University had previously announced that they had developed a new-structure nonvolatile magnetic memory device. The device has a three-terminal configuration, which is different from the two-terminal magnetic memory device that is just about to hit the market.